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| (R) BUF420A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 2 1 APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROL DESCRIPTION The BUF420A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1000 450 7 30 60 6 9 200 -65 to 150 150 Uni t V V V A A A A W o o C C June 2000 1/6 BUF420A THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1000 V V CE = 1000 V V CE = 1000 V V CE = 1000 V V BE = 5 V I C = 200 mA L = 25 mH 450 Tc = 100 o C Tc = 100 C o Min. Typ . Max. 0.2 1 0.2 1 1 Un it mA mA mA mA mA V V CEO(sus ) Collector-Emitter Sustaining Voltage (IB = 0) V EBO V CE(sat ) Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 10A 10 A 20 A 20 A 10A 10 A 20 A 20 A IB IB IB IB IB IB IB IB = = = = = = = = 1 1 2 2 1 1 2 2 A A A A A A A A 7 0.8 Tc =100 o C 0.5 T c =100 o C 0.9 Tc =100 C T c =100 C 100 70 150 2.1 8 1.1 4 1 0.05 0.08 2 0.1 0.18 500 o o V V V V V V V V V A/s A/s A/s V V V V s s s s s s V 2.8 2 1.5 1.1 1.5 V BE(s at) Base-Emitter Saturation Voltage di c /dt Rate of rise on-state Collector Current V CC = 300 V R C = 0 t p = 3 s o T j =25 C I B1 = 1.5 A T j =100 o C I B1 = 1.5 A o Tj =100 C I B1 = 6 A V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH R C = 60 T j =25 o C o T j =100 C R C = 60 o T j =25 C o T j =100 C V CC = 50 V R BB = 0.6 IB1 = 0.5 A V CC = 50 V R BB = 0.6 IB1 = 1 A o Tj =100 C V CC = 50 V R BB = 0.6 IB1 = 1 A Tj =125 o C V CC = 50 V R BB = 0.15 IB1 = 1 A V CE (3s) Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime Maximum Collector Emitter Voltage without Snubber INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime V CE (5s) ts tf tc ts tf tc V CEW ts tf tc 1.5 0.04 0.07 s s s 2/6 BUF420A ELECTRICAL CHARACTERISTICS (continued) Symb ol ts tf tc V CEW Parameter INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime Maximum Collector Emitter Voltage without Snubber INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime Maximum Collector Emitter Voltage without Snubber Test Cond ition s I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH I C = 20 A V BB = -5 V V c la mp = 400 V L = 0.12 mH I C = 20 A V BB = - 5 V V c la mp = 400 V L = 0.12 mH I CW off = 30 A V BB = - 5 V L = 0.08 mH o T j =125 C V CC = 50 V R BB = 0.15 IB1 = 1 A o Tj =100 C V CC = 50 V R BB = 0.15 IB1 = 1 A Tj =125 o C V CC = 50 V R BB =0.6 IB1 = 4 A V CC = 50 V R BB = 0.6 IB1 = 4 A Tj =125 o C V CC = 50 V R BB = 0.6 IB1 = 6 A 400 500 Min. Typ . Max. 3 0.15 0.25 Un it s s s V ts tf tc ts tf tc V CEW 2.2 0.06 0.12 3.5 0.12 0.3 s s s s s s V Turn-on Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resistor Turn-off Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier 3/6 BUF420A Turn-on Switching Test Waveforms. Turn-off Switching Test Waveforms (inductive load). Forward Biased Safe Operating Areas. Reverse Biased Safe Operating Area Storage Time Versus Pulse Time. 4/6 BUF420A TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 1 2 3 P025A G 5/6 BUF420A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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